DSP45-16AZ phase leg standard rectifier 1 4 3 part number DSP45-16AZ backside: anode/cathode fav f vv 1.23 rrm 45 1600 = v= v i= a 2x features / advantages: applications: package: planar passivated chips very low leakage current very low forward voltage drop improved thermal behaviour diode for main rectification for single and three phase bridge configurations to-268aa (d3pak-hv) industry standard outline rohs compliant epoxy meets ul 94v-0 ixys reserves the right to change limits, conditions and dimensions. 20130215a data according to iec 60747and per semiconductor unless otherwise specified ? 2013 ixys all rights reserved
DSP45-16AZ v = v a2s a2s ka2s ka2s symbol definition ratings typ. max. i r v i a v f 1.26 r 0.55 k/w r min. 45 v rsm v 40 t = 25c vj t = c vj ma 1.5 v = v r t = 25c vj i = a f v t = c c 130 p tot 270 w t = 25c c r k/w 45 1600 max. non-repetitive reverse blocking voltage reverse current forward voltage drop total power dissipation conditions unit 1.57 t = 25c vj 150 v f0 v 0.81 t = c vj 175 r f 9.1 m ? v 1.23 t = c vj i = a f v 45 1.66 i = a f 90 i = a f 90 threshold voltage slope resistance for power loss calculation only a 150 v rrm v 1600 max. repetitive reverse blocking voltage t = 25c vj c j 18 j unction capacitance v = v; 400 t = 25c f = 1 mhz r vj pf i fsm t = 10 ms; (50 hz), sine t = 45c vj max. forward surge current t = c vj 150 i2t t = 45c value for fusing t = c 150 v = 0 v r v = 0 v r v = 0 v v = 0 v t = 8,3 ms; (60 hz), sine t = 10 ms; (50 hz), sine t = 8,3 ms; (60 hz), sine t = 10 ms; (50 hz), sine t = 8,3 ms; (60 hz), sine t = 10 ms; (50 hz), sine t = 8,3 ms; (60 hz), sine vj r vj r t = c vj 175 480 520 840 805 a a a a 410 440 1.15 1.13 1600 fav 180 sine average forward current thermal resistance junction to case thjc thermal resistance case to heatsink thch rectifier 1700 0.15 ixys reserves the right to change limits, conditions and dimensions. 20130215a data according to iec 60747and per semiconductor unless otherwise specified ? 2013 ixys all rights reserved
DSP45-16AZ ratings product mar k i n g date code part no. logo abcd ixys assembly code assembly line zyyww dsp45-12a to-247ad (3) 1200 package t op c t vj c 175 virtual junction temperature -40 weight g 4 symbol definition typ. max. min. conditions operation temperature unit f c n 120 mounting force with clip 20 mm mm 9.4 5.6 d spp/app creepage distance on surface | st riking distance through air d spb/apb terminal to backside i rms rms current 70 a per terminal 150 -40 terminal to terminal dsp45-16a dsp45-16ar to-247ad (3) isoplus247 (3) 1600 1600 dsp45-18a to-247ad (3) 1800 to-268aa ( d3pak-hv ) similar part package voltage class dsp45-12az to-268aa (d3pak) (2hv) 1200 delivery mode quantity code no. part number marking on product ordering DSP45-16AZ 514141 tube 30 DSP45-16AZ standard t stg c 150 storage temperature -40 threshold voltage v 0.81 m ? v 0 max r 0 max slope resistance * 6.5 equivalent circuits for simulation t = vj i v 0 r 0 rectifier 175 c * on die level ixys reserves the right to change limits, conditions and dimensions. 20130215a data according to iec 60747and per semiconductor unless otherwise specified ? 2013 ixys all rights reserved
DSP45-16AZ min max min max a 4.90 5.10 0.193 0.201 a1 2.70 2.90 0.106 0.114 a2 0.02 0.25 0.001 0.010 b 1.15 1.45 0.045 0.057 c 0.40 0.65 0.016 0.026 c2 1.45 1.60 0.057 0.063 d 13.80 14.00 0.543 0.551 d1 11.80 12.10 0.465 0.476 d2 7.50 7.80 0.295 0.307 d3 2.90 3.20 0.114 0.126 e 15.85 16.05 0.624 0.632 e1 13.30 13.60 0.524 0.535 e 5.450 bsc 0.215 bsc h 18.70 19.10 0.736 0.752 l 1.70 2.00 0.067 0.079 l2 1.00 1.15 0.039 0.045 l3 0.250 bsc 0.010 bsc l4 3.80 4.10 0.150 0.161 dim. millimeter inches 1 4 3 outlines to-268aa (d3pak-hv) ixys reserves the right to change limits, conditions and dimensions. 20130215a data according to iec 60747and per semiconductor unless otherwise specified ? 2013 ixys all rights reserved
DSP45-16AZ 0.001 0.01 0.1 1 200 240 280 320 360 400 234567890 1 1 0 200 400 600 800 1000 1200 0.5 1.0 1.5 0 10 20 30 40 50 60 70 80 0 1020304050 0 20 40 60 80 0 50 100 150 200 1 10 100 1000 10000 0.0 0.1 0.2 0.3 0.4 0.5 0.6 i 2 t [a 2 s] i fsm [a] i f [a] v f ] s [ t ] v [ p tot [w] i davm [a] t amb [c] t[ms] z th [k/w] 0 50 100 150 200 0 20 40 60 80 t c [c] 50 hz, 80% v rrm t vj = 45c t vj = 45c t vj = 150c t vj = 150c t[ms] i davm [a] v r = 0 v fig. 1 forward current versus voltage drop per diode fig. 2 surge overload current fig. 3 i 2 t versus time per diode fig. 4 power dissipation vs. direct output current & ambient temperature fig. 5 max. forward current vs. case temperature fig. 6 transient thermal impedance junction to case t vj = 150c 125c 25c dc = 1 0.5 0.4 0.33 0.17 0.08 r thja : 0.6 kw 0.8 kw 1 kw 2 kw 4 kw 8 kw dc = 1 0.5 0.4 0.33 0.17 0.08 i 1 2 3 4 r i 0.033 0.095 0.164 0.258 t i 0.0006 0.0039 0.033 0.272 rectifier ixys reserves the right to change limits, conditions and dimensions. 20130215a data according to iec 60747and per semiconductor unless otherwise specified ? 2013 ixys all rights reserved
|
